四虎影视

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Location: Raleigh, NC

Essential Job Duties:

• RF Device Design and Development (30%)
  • Design and optimize GaN RF devices including discrete HEMTs, passive elements, and MMICs.
  • Establish a flexible PDK defining the CLAWS RF technologies.
  • Utilize TCAD simulation (e.g., Synopsys, Silvaco, etc.) for process and device modeling, electrical characteristics prediction, and performance enhancement.
  • Develop and refine device layouts for wafer fabrication, ensuring manufacturability and reliability.

• Process Integration and Fabrication (30%)
  • Be responsible for process development and integration enabling the fabrication of GaN devices leveraging NCSU's nanofabrication facilities.
  • Establish hands-on proficiency in relevant fabrication methods, including lithography, metal and dielectric deposition, etching, wafer dicing, and others as needed.

• Characterization and Reliability Testing (20%)
  • Define and execute device on-wafer and packaged device characterization plans that include DC, small signal RF, load-pull tests.
  • Utilize model extraction tools (e.g., IC-CAP) to generate compact models and from electrical test data.
  • Leverage failure analysis and characterization methods to support process development and integration.
  • Analyze reliability metrics to assess long-term device stability.
    
    
    
• Cross-Functional Collaboration (20%)
  • Work with process engineers and R&D partners to drive technology improvements.
  • Collaborate with circuit designers, applications engineers, and product development teams to translate device-level improvements into system-level advantages.

Other Work/Responsibilities:

• The successful candidate will:
  • Comply with stated workplace policies.
  • Communicate results, plans, and other updates to a variety of audiences.
  • Adhere to and mentor others in known best practices.
  • Support CLAWS activities such as tours, meetings, and conferences.

Minimum Experience/Education:

• Ph.D. in a relevant field with research focus on GaN device processing.

• Bachelor's degree in a relevant field with at least 5 years' experience in GaN device development. A track record of significant achievement is required.

Required Qualifications:

• Advanced skill in developing and using EDA tools for RF device design.
• Proficiency developing or integrating processes supporting the fabrication of GaN RF devices.
• Experience and proficiency in one or more of the following fabrication areas: lithography, metal or dielectric film deposition, or etching.
• Excellent communication and interpersonal skills.
• Ability to multitask and meet deadlines with moderate supervision.
• Ability to follow safe procedures for working with semiconductor fabrication equipment, chemicals, and compressed gas cylinders.
• Comfort collaborating with students, faculty, and staff of varying experience and backgrounds.
• Eligibility to obtain clearance upon request of the US government

Preferred Qualifications:

• E-beam lithography.
• Device characterization
• Impedance transforming fixture design
• Failure analysis, lifetime estimation, and defect inspection.
• MES and SPC systems.
• Statistical methods (e.g., DOE, GR&R) and tools (e.g., JMP, Minitab)

Required License or Certification:

• N/A

AA/EEO Statement: